Dual-Gate MOSFET With Atomic-Layer-Deposited as Top-Gate Dielectric
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-
structured molybdenum disulfide (MoS 2) crystals and MoS 2 dual-gate n-channel MOSFETs
with ALD Al 2 O 3 as the gate dielectric. Our CV study of MOSFET structures shows good
interface between 2-D MoS 2 crystal and ALD Al 2 O 3. Maximum drain currents using back
gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at V ds= 2 V
with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We …
structured molybdenum disulfide (MoS 2) crystals and MoS 2 dual-gate n-channel MOSFETs
with ALD Al 2 O 3 as the gate dielectric. Our CV study of MOSFET structures shows good
interface between 2-D MoS 2 crystal and ALD Al 2 O 3. Maximum drain currents using back
gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at V ds= 2 V
with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We …
We demonstrate atomic-layer-deposited (ALD) high- k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS 2 ) crystals and MoS 2 dual-gate n-channel MOSFETs with ALD Al 2 O 3 as the gate dielectric. Our C - V study of MOSFET structures shows good interface between 2-D MoS 2 crystal and ALD Al 2 O 3 . Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at V ds = 2 V with a channel width of 3 μm, a channel length of 9 μm, and a top-gate length of 3 μm. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm 2 /V·s. The highest current on/off ratio is over 10 8 .
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