We investigate the effects of the thickness reduction and specific postannealing treatments
in order to improve the electrical properties of yttrium oxide-based metal-insulator-metal
(MIM) capacitors. The films were grown on Si∕ Ti Si 2∕ Ti N substrates at 350 C by a low
temperature process (pulsed liquid injection plasma-enhanced metal organic chemical
vapor deposition). Although the thickness reduction leads to an increase of the capacitance
density, the other electrical characteristics (the voltage linearity, the leakage currents, and …