Atomic spin structure of antiferromagnetic domain walls
Nature materials, 2006•nature.com
The search for uncompensated magnetic moments on antiferromagnetic surfaces is of great
technological importance as they are responsible for the exchange-bias effect that is widely
used in state-of-the-art magnetic storage devices. We have studied the atomic spin structure
of phase domain walls in the antiferromagnetic Fe monolayer on W (001) by means of spin-
polarized scanning tunnelling microscopy and Monte Carlo simulations. The domain wall
width only amounts to 6–8 atomic rows. Although walls oriented along< 100> directions are …
technological importance as they are responsible for the exchange-bias effect that is widely
used in state-of-the-art magnetic storage devices. We have studied the atomic spin structure
of phase domain walls in the antiferromagnetic Fe monolayer on W (001) by means of spin-
polarized scanning tunnelling microscopy and Monte Carlo simulations. The domain wall
width only amounts to 6–8 atomic rows. Although walls oriented along< 100> directions are …
Abstract
The search for uncompensated magnetic moments on antiferromagnetic surfaces is of great technological importance as they are responsible for the exchange-bias effect that is widely used in state-of-the-art magnetic storage devices. We have studied the atomic spin structure of phase domain walls in the antiferromagnetic Fe monolayer on W(001) by means of spin-polarized scanning tunnelling microscopy and Monte Carlo simulations. The domain wall width only amounts to 6–8 atomic rows. Although walls oriented along <100> directions are found to be fully compensated, detailed analysis of <110>-oriented walls reveals an uncompensated perpendicular magnetic moment. Our result represents a major advance in the field of antiferromagnetism, and may lead to a better understanding of the magnetic interaction between ferromagnetic and antiferromagnetic materials.
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